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SiC yokutira Graphite Barrel Suceptor
Tsatanetsatane wazomwe:
1. Mayina ena: Epitaxial ng'anjo ya graphite mbiya, SiC yokutidwa thireyi yopyapyala, wopyapyala susceptor mbiya mtundu, graphite susceptor
2. Kugwiritsa Ntchito: Kwa njira yakukula kwa wafer epitaxial
3. Kore magawo: The homogeneity wa mpweya otaya kumunda ndi munda matenthedwe mu chipinda anachita akhoza wokometsedwa pogwiritsa ntchito isostatic kuthamanga mkulu chiyero graphite masanjidwewo pamodzi ndi mankhwala nthunzi mafunsidwe (CVD) SiC ❖ kuyanika luso ndi kutentha kukana 1600 ℃, matenthedwe madutsidwe 300W/m·K5999 defectity 9 ndi 999 defectity. Epitaxial wosanjikiza akhoza kukhala
kuchepetsedwa kwambiri.
Kufotokozera
SiC yokutira Graphite Wafer Epitaxy Barrel Suceptor ndiye chinthu chofunikira kwambiri pa zida zokulira za Si epitaxial, ndipo kapangidwe kake kamaphatikiza kutenthetsa kwapamwamba kwa graphite ndi kukana kwa dzimbiri kwa zokutira za SiC. Gawo laling'ono ndi loyera kwambiri la Sigley graphite (kuyera ≥99.9995%) lopangidwa ndi isostatic kukanikiza ndondomeko. Kupaka kwa 50μm wandiweyani wa β-SiC kudayikidwa pamwamba ndi njira ya CVD. Imatchinga bwino kutulutsa konyansa kwa matrix a graphite kutentha kwambiri (1200-1800 ℃) ndi mipweya yaukali (monga SiH4, C3H8,ndi H2), kupewa kuipitsidwa kwa katumbu. Kapangidwe ka mbiya (kwa zida za 4/6/8 inch) Mwa kukhathamiritsa njira yoyendera mpweya ndi kugawa kwamafuta akumunda, makulidwe amtundu wa epitaxial wosanjikiza amawongoleredwa mkati mwa ± 1.5%, ndipo kachulukidwe kachilema kumachepetsedwa mpaka <0.05cm-2. Kuphatikiza apo, kuchuluka kwamafuta akuwonjezera kwa SiC zokutira ndi matrix a graphite kumafanana kwambiri (4.5 × 10).-6/K vs 4.8×10-6/K), kupewa kupaka utoto kapena kukhetsedwa kwa tinthu komwe kumachitika chifukwa cha kutentha kwambiri, ndikuwonetsetsa kuti zida zikugwira ntchito kwanthawi yayitali. Chigawochi chagwiritsidwa ntchito pa mzere wopangira epitaxy wa otsogola opanga semiconductor ku China, mtengo wa epitaxy wang'anjo imodzi wachepetsedwa ndi 40%, ndipo zokolola za chipangizocho zawonjezeka kufika 98%.
Mtundu wa mbiya susceptor poyerekeza ndi pancake susceptor
| khalidwe | Mtundu wa mbiya Susceptor | Pancake Susceptor |
| Kutentha kufanana | Kutsika kofananako pang'ono chifukwa cha mpweya woyima komanso kufananiza kwa ma radiation (chipukuta misozi cha kutentha chikufunika). | Thermal field symmetry ndi yokwera, ndipo kutentha mofanana mu ndege kumakhala bwinoko. |
| Kuyenda bwino kwa gasi | Kuyenda kwa mpweya kumazungulira khoma la migolo, ndipo zowotcha zam'mphepete zimakhazikika / kuyikidwa mosavuta. | Kuthamanga kwake ndi perpendicular pamwamba pa mtanda, ndipo kuyenda ndi njira zimayendetsedwa mosavuta. |
| Mphamvu ndi mtengo | Kutulutsa kwakukulu, koyenera kupanga misa (chiwerengero chambiri cha zophika pa nthawi ya unit). | Kutulutsa kochepa, koyenera R&D/kupanga batch yaying'ono. |
| Kukonza zovuta | Mapangidwewo ndi ovuta, ndipo kuyeretsa ndi kukonzanso kumatenga nthawi yaitali. | Mapangidwe otseguka, kukonza kosavuta. |
zofunika
| Zoyambira zakuthupi za CVD SiC zokutira | |
| katundu | Mtengo Wapatali |
| Kapangidwe ka Crystal | FCC β gawo polycrystalline, makamaka (111) yolunjika |
| kachulukidwe | 3.21 g / cm³ |
| kuuma | 2500 Vickers kuuma (500g katundu) |
| Kukula kwa tirigu | 2 ~ 10μm |
| Chemical Purity | 99.99995% |
| Kutentha maluso | 640 y·kg-1·K-1 |
| Kutentha kwa Sublimation | 2700 ℃ |
| Mphamvu Zosiyanasiyana | 415 MPa RT 4-mfundo |
| Wamng'ono Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| Kutentha Kwambiri | 300W·m-1·K-1 |
| Kukula kwa Thermal (CTE) | 4.5 × 10-6K-1 |
Mapulogalamu
Amagwiritsidwa ntchito popanga silicon epitaxy/CVD process.
Zomwe zimagwiritsidwa ntchito kwambiri pazida zachikhalidwe za LPE kapena CVD (monga machitidwe oyambirira a Aixtron).
Mpikisano Wopikisana
Kukaniza chilengedwe cha dzimbiri kwambiri: Kupaka kwa β-SiC kumalimbana ndi kukokoloka kwa plasma ndi okosijeni, ndipo moyo wake ndi wautali nthawi 5 kuposa wa graphite wosatsekedwa.
Kuwongolera koyenera kwa gawo lotenthetsera: kapangidwe ka mbiya kumachepetsa chipwirikiti, kusinthasintha kwamafuta kumafanana ndi gawo lapansi, ndikupewa kulephera kwamafuta.
Chiwopsezo choyipitsidwa ndi zero: gawo lapansi loyera kwambiri komanso zokutira, zonyansa zachitsulo (Fe, Al) zili <0.1ppm.
Ntchito yonse yantchito: kuthandizira kukonza matrix, kuyika zokutira, kuyesa magwiridwe antchito amodzi.
