Single wafer epi graphite susceptor

ASM monolithic epitaxial thireyi lakonzedwa mkulu-ntchito pakachitsulo carbide (SiC), gallium nitride (GaN) ndi ena m'badwo wachitatu semiconductor epitaxial ndondomeko, mankhwala zikuphatikizapo ya thireyi graphite, mphete graphite ndi zina Chalk, ntchito mkulu chiyero graphite gawo lapansi + nthunzi mafunsidwe mu silicon carbide dongosolo kutentha ndi kukhazikika kwa silicon carbide kutentha, kutengera mawonekedwe a silicon carbide kutentha, Kutentha kofananako. Ndilo gawo lalikulu la pepala lolondola kwambiri la epitaxial pakupanga kwakukulu.

Tsatanetsatane wazomwe:

1. Mayina ena: 6 inch wafer epi susceptor, 8 inch wafer epi susceptor, graphite susceptor, single wafer susceptor.

2. Kugwiritsa ntchito: Kwa silicon carbide yapamwamba kwambiri (SiC), gallium nitride (GaN) ndi njira ina yachitatu ya semiconductor epitaxial.

Zatsopano zakuthupi: graphite + SiC zokutira

Graphite

-Ultra-high thermal conductivity (> 130 W / m·K), kuyankha mofulumira ku zofunikira zowongolera kutentha, kuonetsetsa kuti ndondomekoyi ikhale yokhazikika.

-Kuchepetsa kutentha kwapakati (CTE: 4.6 × 10⁻⁶/°C), kuchepetsa kutentha kwapamwamba, kukulitsa moyo wautumiki.

CVD SiC zokutira

-Kukana dzimbiri. Pewani kuwukiridwa ndi mpweya wotuluka monga H₂, HCl, ndi SiH₄. Amapewa kuipitsidwa kwa epitaxial wosanjikiza ndi volatilization ya maziko.

-Kuchulukana kwapamtunda: kupaka porosity ndi zosakwana 0.1%, zomwe zimalepheretsa kukhudzana pakati pa graphite ndi wafer ndikuletsa kufalikira kwa zonyansa za carbon.

-Kulekerera kutentha kwakukulu: ntchito yokhazikika kwa nthawi yayitali m'chilengedwe pamwamba pa 1600 ° C, igwirizane ndi kutentha kwakukulu kwa SiC epitaxy.

Mapangidwe amafuta otenthetsera komanso kukhathamiritsa kwakuyenda kwa mpweya

Uniform matenthedwe ma radiation kapangidwe

Pamwamba pa susceptor amapangidwa ndi ma grooves owonetsa matenthedwe angapo, ndipo makina owongolera otenthetsera a chipangizo cha ASM amakwaniritsa kutentha mkati mwa ± 1.5 ° C (6-inch wafer, 8-inch wafer), kuwonetsetsa kusasinthika komanso kufanana kwa makulidwe a epitaxial layer (kusinthasintha <3%).

Njira yowongolera mpweya

Mabowo osinthira m'mphepete ndi mizati yothandizira adapangidwa kuti azitha kukhathamiritsa kagawidwe ka laminar ya gasi yomwe imayendera pamtunda, kuchepetsa kusiyana kwa kuchuluka komwe kumachitika chifukwa cha mafunde a eddy, ndikuwongolera kufanana kwa doping.

Kugwirizana ndi kudalirika

Multi-scene kusintha

Yogwirizana ndi 4H-SiC, 6H-SiC homoepitaxy, ndi GaN-on-SiC heteroepitaxy njira, kuthandizira mtundu wa N / P doping (monga N₂, Al doping).

Kusamalira moyo wautali

Kuuma kwa pakachitsulo carbide ❖ kuyanika kufika 430 Gpa 4pt mapindikidwe, 1300 ℃, kukana tinthu kukokoloka kwachuluke ndi nthawi zoposa 3, moyo utumiki wa thireyi umodzi upambana 5000 ndondomeko maola, ndi mtengo wa consumables mabuku yafupika.

Ma Scenarios ofunsira

Chida chamagetsi cha SiC chagalimoto

5G RF kutsogolo-kumapeto gawo

Photovoltaic ndi makina osungira mphamvu

Mwachidule Mfundo Zaukadaulo

Kusasinthika kwamayendedwe: Kupyolera mu kapangidwe kofananira ka zida za ASM, nthawi yosinthira malo otentha komanso kuyenda kwa mpweya kumachepetsedwa.

Kudzipereka kwa Zero kuipitsidwa: Zovala za SiC zimadutsa SEMI muyezo wodziwika bwino wachitsulo (Fe, Ni, etc <1ppb).

Kukonzekera kwamayankhidwe mwachangu: Mapangidwe a tray modular, chithandizo chosinthira pa intaneti ndi chithandizo chaukadaulo.