CVD SiC zokutira zopyapyala susceptor
Tsatanetsatane wazomwe:
1. Mayina ena: SiC TACHIMATA graphite mbale, graphite susceptor, mtanda thireyi.
2. Ntchito: MOCVD epitaxy, LED epitaxy,Si epitaxy,GaN epitaxy.
3. Magawo apakati: chiyero ≥99.99995%, kutentha kwa kutentha 1600 ° C, kutentha kwa kutentha 300W / m·K.
Kufotokozera
Semixlab imayang'ana kwambiri pakupanga ndi kupanga zokutira za silicon carbide (SiC) zapamwamba kwambiri, ndipo akudzipereka kupereka mayankho ogwira mtima kwambiri pamakampani opanga semiconductor. Kupyolera muukadaulo waukadaulo waukadaulo wa vapor deposition (CVD), timapereka ntchito zokutira zomata kwa owukira kuti awonetsetse kuti amagwira ntchito bwino m'malo ovuta kwambiri.
Timapanga zokutira zoyera kwambiri za β-SiC (crystal orientation (111)) pamtunda wa graphite substrate yapamwamba kwambiri kudzera mu teknoloji ya CVD, panthawi imodzimodziyo, imakhala ndi kutentha kwapamwamba kwambiri, kukana kwa corrosion ndi mphamvu yogawa kutentha kwa yunifolomu. Zogulitsa zoyenera Aixtron, Veeco ndi zida zina zokulirapo za epitaxial, zomwe zimagwiritsidwa ntchito kwambiri ku GaN/GaAs ndi kukula kwina kwa epitaxial.
Gawo laling'ono la CVD SiC coating wafer limapangidwa ndi chiyero chapamwamba cha SGL graphite, ndipo zokutira wandiweyani wa silicon carbide umakulitsidwa mofanana pamwamba pake ndi ndondomeko ya vapor deposition (CVD). Izi zimachitika m'chipinda chotentha kwambiri ndipo zimatsimikizira kukhulupirika kwa nanoscale crystalline ℃ poyang'anira ndendende chiŵerengero cha gwero la silicon (mwachitsanzo, methyltrichlorosilane) ndi mpweya woyambira mpweya, kutentha kwapakati (nthawi zambiri pakati pa 1000 ° C ndi 1400 ℃) ndi mlingo wa malo. Makulidwe a zokutira amatha kusinthidwa malinga ndi zofunikira zogwiritsira ntchito, kuyambira ma microns angapo mpaka makumi a ma microns, kuti akwaniritse zofunikira zamakina pa kutentha kwambiri, ndikupewa chiopsezo cha kupsinjika chifukwa cha makulidwe ochulukirapo.
Mu kukula kwa LED epitaxial, thireyi yawafer imayenera kupirira kutentha kwakanthawi kopitilira 1600 ℃ komanso kuyendetsa njinga mwachangu. Ndi malo ake osungunuka kwambiri (pafupifupi 2700 ℃), kuchuluka kwamafuta ochepa (4.5 × 10)-6/K) komanso matenthedwe abwino kwambiri (~ 120 W/m·K), zokutira za CVD SiC zimatha kukhazikika pakusintha kwa kutentha kwambiri ndikupewa kuwotcha kapena ming'alu yaying'ono chifukwa cha kupsinjika kwa kutentha. Kuphatikiza apo, kusakhazikika kwamankhwala kwa SiC kumapangitsa kuti iwonetse kukana kwa dzimbiri mumipweya yowononga (monga HCl, H2) chilengedwe, kuchepetsa kwambiri kuipitsidwa kodetsedwa komwe kumayambitsidwa ndi volatilization kapena zochitika zam'mbali panthawi ya ndondomekoyi, potero kumapangitsanso kufanana kwa epitaxial wosanjikiza pamtunda ndi kutulutsa kwa chipangizocho.
Chogulitsacho chimagwiritsidwa ntchito kwambiri mum'badwo wachitatu wopanga semiconductor, wamagetsi apamwamba kwambiri a LED chip. Mwachitsanzo, muzitsulo zachitsulo-organic chemical vapor deposition (MOCVD) pazida za GaN-on-SiC RF, thireyi ya CVD SiC imakwaniritsa kutentha kofanana mkati mwa ± 1 ℃ ya pamwamba pamtengowo kudzera mu kapangidwe kake kakugawa kwamunda, kuonetsetsa kuti kupatuka kwa makulidwe a epitaxial sikuchepera 1%. Pa nthawi yomweyo, ake otsika tinthu kumasulidwa makhalidwe (tinthu kachulukidwe <0.1/cm2monga momwe zimayesedwera ndi SEM-EDS) zimapangitsa kuti zikhale zabwino kwambiri m'zipinda zoyera kwambiri, makamaka zoyenerera ma node otsogola omwe amakhudzidwa ndi zolakwika (monga njira zothandizira za logic chips pansi pa 5 nm).
Poyerekeza ndi ma tray achikhalidwe, moyo wautumiki wa CVD SiC coating wafer hy pnotic tor ukhoza kukulitsidwa nthawi 3-5. Zodzitchinjiriza pamwamba pake zimachepetsa kukonzanso pafupipafupi ndipo, kuphatikizika ndiukadaulo wokonzanso zokutira zakumaloko, zimachepetsa kubweza ndalama zochulukirapo kuposa 40%. Malinga ndi deta yoyezera makampani, 6-inchi SiC epitaxial kupanga mzere pogwiritsa ntchito mankhwalawa akhoza kuchepetsa kusinthasintha kwa ndondomeko pakati pa magulu ndi 15%, kuonjezera mphamvu yopanga pachaka ndi 20%, ndi kuchepetsa kuchuluka kwa zidutswa zowonongeka chifukwa cha kuipitsidwa kwa 0.03%.
Kuchokera pakufufuza kwa labotale ndi chitukuko mpaka kupanga kwakukulu, Semixlab's CVD SiC coating wafer hy pnotic tor nthawi zonse yalunjika kwa mtsogoleri wamakampani. Sikuti ndi njira yokhayo yogwiritsira ntchito, komanso mwala wapangodya waumisiri wokhudza kutentha kwapamwamba kwambiri. Idzapitilizabe kupereka chitsimikizo chodalirika pakupanga zida zapamwamba m'magawo apamwamba kwambiri monga kulumikizana kwa 5G, magetsi amagetsi atsopano, ndi quantum computing.

zofunika
| Zoyambira zakuthupi za CVD SiC zokutira | |
| katundu | Mtengo Wapatali |
| Kapangidwe ka Crystal | FCC β gawo polycrystalline, makamaka (111) yolunjika |
| kachulukidwe | 3.21 g / cm³ |
| kuuma | 2500 Vickers kuuma (500g katundu) |
| Kukula kwa tirigu | 2 ~ 10μm |
| Chemical Purity | 99.99995% |
| Kutentha maluso | 640 y·kg-1·K-1 |
| Kutentha kwa Sublimation | 2700 ℃ |
| Mphamvu Zosiyanasiyana | 415 MPa RT 4-mfundo |
| Wamng'ono Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| Kutentha Kwambiri | 300W·m-1·K-1 |
| Kukula kwa Thermal (CTE) | 4.5 × 10-6K-1 |
Mapulogalamu
Wafer Support ndi Kutentha kwa kutentha mu njira za MOCVD, kuphatikizapo buluu ndi wobiriwira LED, UV LED ndi deep-UV LED etc., zomwe zimasinthidwa ku zipangizo kuchokera ku LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI ndi zina zotero.
Mpikisano Wopikisana
Ukadaulo wotsogola: Njira ya CVD yokwaniritsa (111) β-SiC, kukula kwambewu 2-10μm, kapangidwe kake.
Kusintha kwakukulu kwa chilengedwe: kukana kutentha kwa okosijeni, kukana kukokoloka kwa plasma, phulusa <5ppm.
Kuwongolera kwabwino kwamafuta: Kutentha kwamafuta a 300W/m·K, CTE kumagwirizana bwino ndi graphite kupewa kupsinjika kwamafuta.
Utumiki wathunthu: Thandizani kukonzanso kwa gawo lapansi, kuyika pansi, kuyesa kutumiza koyimitsa kamodzi.

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