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TaC Planetary Epi Susceptor
| Malo Oyamba: | China |
| Name Brand: | Semixlab |
| Number Model: | Mtengo wa TPES0001 |
| chitsimikizo: | ISO 9001 |
| Mawerengedwe Ochepa Ochepa: | 1pc |
| Price: | makonda |
| Zomwe Zidalumikiza: | Standard export box |
| Nthawi yoperekera: | 30-45days |
| Terms malipiro: | Kuti tikambirane |
| Perekani Mphamvu: | 200pcs pamwezi |
Kufotokozera
The Aixtron planetary disk ndi gawo lofunika kwambiri pazida za metal-organic chemical vapor deposition (MOCVD), zomwe zimagwiritsidwa ntchito kwambiri popanga silicon carbide (SiC) epitaxial sheets. Mapangidwe ake apakati amatengera kapangidwe kake kapamwamba kwambiri ka graphite zakuthupi + tantalum carbide (TaC) zokutira.
Tsatanetsatane wazomwe:
1. Mayina ena: Aixtron pulaneti disk, TaC yokutidwa mapulaneti susceptor, SiC Epi susceptor kwa Aixtron reactor
2. Kugwiritsa ntchito: Kwa silicon carbide yapamwamba kwambiri (SiC), gallium nitride (GaN) ndi njira ina yachitatu ya semiconductor epitaxial.
3. Magawo apakati:
Kapangidwe kameneka kamakhala kokhazikika pa 2000 ℃ kuti tipewe kuipitsidwa ndi kuipitsidwa kwa chipindacho.
Kukaniza koyenera kukokoloka kwa mpweya woyambilira monga SiH₄ ndi HCl. Amachepetsa zowonongeka pa gawo lapansi.
Kutentha kwa kutentha kwa graphite + TaC yopangidwa ndi gulu ili pafupi ndi ya SiC wafer (SiC: 490 W / m · K), kuchepetsa kusokonezeka kwa lattice chifukwa cha kupsinjika kwa kutentha.
Kukula kwapamwamba kwa zokutira za TaC ndi <1μm, zomwe zingalepheretse kugwa kwa tinthu tating'onoting'ono ndikuwonetsetsa kuti pamwamba pa epitaxial wosanjikiza (chilema kachulukidwe <0.5/cm²).
Zowonera mwachidule
The Aixtron planetary disk ndi gawo lofunika kwambiri pazida za metal-organic chemical vapor deposition (MOCVD), zomwe zimagwiritsidwa ntchito kwambiri popanga silicon carbide (SiC) epitaxial sheets. Mapangidwe ake apakati amatengera kapangidwe kake kapamwamba kwambiri ka graphite zakuthupi + tantalum carbide (TaC) zokutira:
Graphite gawo lapansi: amapereka kwambiri matenthedwe madutsidwe (~ 130 W/m·K) ndi kutentha bata (kutentha> 2000 ℃) kuonetsetsa yunifolomu matenthedwe munda kugawa mu chipinda anachita.
Kupaka kwa Tantalum carbide: Pamwamba pa ma graphite amaphimbidwa ndi vapor deposition ya mankhwala (CVD) kapena sintered process, nthawi zambiri 30-100um wandiweyani, kuti apange chotchinga chowundana cha mankhwala.
Mapangidwewa amakonzedwa chifukwa cha kutentha kwakukulu (1500-1700 ℃), malo owononga kwambiri (silane, HCl ndi mpweya wina) wa kukula kwa SiC epitaxial, kupititsa patsogolo kukhazikika kwa ndondomeko ndi zokolola zamtengo wapatali.
Tantalum carbide (TaC) ndi silicon carbide (SiC) kufananitsa magwiridwe antchito
| Zopaka Zofunika | Kupaka kwa Tantalum carbide (TaC). | Silicon carbide (SiC) zokutira |
| Mfundo yosungunula | Malo osungunuka 3880 ℃ (malire apamwamba a kutentha) | Malo osungunuka 2700 ℃ (osavuta kuwola pakatentha kwambiri) |
| Kuwonjezela kwamafuta kokwana | Kuwonjezako kowonjezera kwamafuta 6.3×10⁻⁶/K (kufanana bwino ndi graphite) | 4.5×10⁻⁶/K (yosavuta kusweka chifukwa cha kusagwirizana kwa kutentha) |
| Kukana kwa silicon vapor corrosion | Kukana kwabwino kwa silicon vapor corrosion (otsika TaC ndi Si reactivity) | osauka (pakutentha kwambiri SiC imakhudzidwa ndi Si kupanga gawo la mpweya Si₂C) |
| Chiwopsezo choipitsa tinthu | Chiwopsezo chochepa kwambiri cha kuipitsidwa ndi tinthu (zokutira zolimba popanda pores) | Kukwera (kuphimba komwe kumakonda kukwapula kwanuko) |
| Moyo wonse | Moyo wautumiki> maola 5000 (nthawi yokonza yowonjezereka yopitilira 50%) | Pafupifupi maola 2000-3000 |
Kugwirizana kwa kupanga
Zosinthidwa ku Aixtron G5 WW C ndi nsanja ya Prophet, imatha kunyamula zowotcha 6/8-inch zokhala ndi> 30 wafer / batch.
Mtengo waukadaulo ndi kufunikira kwamakampani
Graphite + tantalum carbide yokutidwa ndi mapulaneti susceptor amathetsa vuto la botolo la zokutira zachikhalidwe za SiC pakutentha kwanthawi yayitali:
Kukhathamiritsa kwa mtengo: onjezerani kusinthasintha kwazinthu zogwiritsira ntchito ndikuchepetsa mtengo wa epitaxial wa chidutswa chimodzi ndi 20%;
Zokolola bwino: kuchepetsa tinthu kuipitsa ndi kutentha banga kwenikweni, ndi kulimbikitsa epitaxial pepala zokolola upambana 95%;
Kukulitsa zenera: kumathandizira kukula kwakukulu (> 50μm/h) ndi zigawo zokulirapo za epitaxial.
Popeza mphamvu ya SiC yapadziko lonse lapansi ikukwezedwa mpaka mainchesi 8, ukadaulo uwu ukhala njira yofunika kwambiri yodutsira botolo la epitaxial consistency.
zofunika
| Zakuthupi za zokutira za TaC | |
| kachulukidwe | 14.3 (g/cm³) |
| Kutulutsa kwapadera | 0.3 |
| Kuwonjezela kwamafuta kokwana | 6.3 10-6/K |
| Kulimba (HK) | 2000 HP |
| kukaniza | 1 × 10-5 Ohm * masentimita |
| Matenda okhazikika | <2500 ℃ |
| Kusintha kwa kukula kwa graphite | -10 ~ 20um |
| Kuphimba makulidwe | ≥20um mtengo wamba (35um ± 10um) |
| Kutentha kwa kutentha | 9-22(W/m·K) |
| Thupi katundu wa isostatic graphite | ||
| katundu | Unit | Mtengo Wapatali |
| Kuchulukana Kwakukulu | g / cm³ | 1.83 |
| kuuma | HSD | 58 |
| Kupuma kwa Magetsi | μΩ.m | 10 |
| Mphamvu Zosiyanasiyana | MPa | 47 |
| Mphamvu zovuta | MPa | 103 |
| Kulimba kwamakokedwe | MPa | 31 |
| Young's Modulus | GPa | 11.8 |
| Kukula kwa Thermal (CTE) | 10-6K-1 | 4.6 |
| Kutentha Kwambiri | W·m-1·K-1 | 130 |
| Avereji Kukula kwa Njere | μm | 8-10 |
Mapulogalamu
Silicon carbide mphamvu chipangizo epitaxy
Ndizoyenera kukula kwa 4H-SiC homogeneous epitaxial, yomwe imagwiritsidwa ntchito popanga zida zamphamvu kwambiri za MOSFET ndi IGBT pamwamba pa 1200V.
Kufunika kwa magalimoto amagetsi atsopano, ma inverter a photovoltaic, mayendedwe anjanji ndi magawo ena kwakula.
Kukula kwa semiconductor ya m'badwo wachitatu
Imathandizira njira ya GaN-on-SiC heteroepitaxy ya zida za 5G RF ndi ma millimeter wave communication chips.
Mpikisano Wopikisana
Chidule cha zabwino zazikulu:
Kupaka kwa TaC ndikwapamwamba kuposa zokutira zachikhalidwe za SiC potengera kukana kwa dzimbiri pa kutentha kwakukulu, kufananitsa matenthedwe ndi moyo wautali, makamaka koyenera chilengedwe cholemeretsa mpweya wa silicon mu kukula kwa SiC epitaxial.
Kukana kutentha kwakukulu:
Kapangidwe kameneka kamakhala kokhazikika pa 2000 ℃ kuti tipewe kuipitsidwa ndi kuipitsidwa kwa chipindacho.
Kukana kwamankhwala:
Kukaniza koyenera kukokoloka kwa mpweya woyambilira monga SiH₄ ndi HCl. Amachepetsa zowonongeka pa gawo lapansi.
Thermal field uniformity:
Kutentha kwa kutentha kwa graphite + TaC yopangidwa ndi gulu ili pafupi ndi ya SiC wafer (SiC: 490 W / m · K), kuchepetsa kusokonezeka kwa lattice chifukwa cha kupsinjika kwa kutentha.
Kutulutsa kwaipitsa kochepa:
Kukula kwapamwamba kwa zokutira za TaC ndi <1μm, zomwe zingalepheretse kugwa kwa tinthu tating'onoting'ono ndikuwonetsetsa kuti pamwamba pa epitaxial wosanjikiza (chilema kachulukidwe <0.5/cm²).
