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SiC yokutidwa mkate wonyezimira susceptor
Tsatanetsatane wazomwe:
Cholinga: Zopangidwira semiconductor CVD (1000 ° C - 1400 ° C) ndi njira zotentha kwambiri za PVD, zimapereka chithandizo chokhazikika chazitsulo.
Magawo apakati: Kuvuta kwapamtunda Ra <0.5 μm;kuuma kwakukulu (>2500 HV); gawo la kukulitsa kwamafuta (CTE) limafanana ndendende (≈ 2.6 x 10⁻⁶/K), kuchotseratu tsamba lawafa kapena kutsetsereka komwe kumachitika chifukwa cha kupsinjika kwa kutentha.
Kufotokozera
Semixlab imapereka susceptor yogwira ntchito kwambiri. Izi makamaka ntchito kwa semiconductor CVD PVD zida kupereka thandizo zopyapyala ndi kupewa kuwonongeka kulikonse ndi madontho mwangozi chifukwa cha nayitrogeni otaya.
SiC Coated silicon carbide base (SiC TACHIMATA Susceptor) amagwiritsidwa ntchito kwambiri mu semiconductors chifukwa cha mawonekedwe ake monga kukana kutentha kwambiri, kukana dzimbiri, kuyera kwambiri komanso kuipitsidwa pang'ono kwa zopyapyala.
ntchito:
Zopangidwa makamaka kwa semiconductor CVD (1000 ° C - 1400 ° C) ndi njira za PVD zotentha kwambiri, zimapereka nsanja yokhazikika yothandizira mawafa.
Zolemba:
Kukhazikika kwapamwamba kwambiri: Kupirira kutentha kopitilira 1400 ° C, kuwonetsetsa kuti wafer imayikidwa bwino popanda kupatuka kulikonse.
Chitetezo champhamvu kwambiri: Yesetsani kukana mphamvu ya nayitrogeni yoyenda> 10 m/s ndi madontho angozi, kupereka chitetezo chokwanira pa mtanda.
Kukhalitsa kwapadera: Chophimba cha SiC chimapereka kulimba kwakukulu (> 2500 HV) ndi kukana dzimbiri, kumawonjezera moyo wautumiki.
Pamwamba-kuyera pamwamba: pamwamba roughness Ra <0.5 μm, kuchepetsa chiopsezo tinthu kuipitsidwa.
Silicon base (silicon Susceptor)
Ntchito: Yoyenera kutentha kwambiri kwa zowotcha za silicon zokhala ndi zofunika kwambiri pakufananitsa ndi matenthedwe (monga kukula kwa epitaxial, <1200°C).
Zolemba:
● Kufananitsa kwabwino kwa kutentha: Kugwirizana ndi zinthu zowonda (monocrystalline silicon), coefficient of thermal expansion (CTE) imagwirizana bwino (≈ 2.6 x 10⁻⁶/K), kuchotsa kwathunthu mapepala ophwanyika kapena kutsetsereka chifukwa cha kupsinjika kwa kutentha.
● Kutumiza mwachangu: Kukonzekera kwazinthu zokhazikika kumafupikitsidwa kwambiri, mpaka masabata a 4-6 (poyerekeza ndi masabata a 8-12 a maziko a SiC).
● Kuyera kwakukulu: Kumakwaniritsa miyezo ya zipangizo za silicon za semiconductor-grade.
● Ubwino wa pamwamba: Wopukutidwa bwino, pamwamba pa roughness Ra <0.2 μm.
zofunika
| Zoyambira zakuthupi za CVD SiC zokutira | |
| katundu | Mtengo Wapatali |
| Kapangidwe ka Crystal | FCC β gawo polycrystalline, makamaka (111) yolunjika |
| kachulukidwe | 3.21 g / cm³ |
| kuuma | 2500 Vickers kuuma (500g katundu) |
| Kukula kwa tirigu | 2 ~ 10μm |
| Chemical Purity | 99.99995% |
| Kutentha maluso | 640 jkg-1·K-1 |
| Kutentha kwa Sublimation | 2700 ℃ |
| Mphamvu Zosiyanasiyana | 415 MPa RT 4-mfundo |
| Wamng'ono Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| Kutentha Kwambiri | 300W·m-1·K-1 |
| Kukula kwa Thermal (CTE) | 4.5 × 10-6K-1 |
Mapulogalamu
SiC epitaxial wosanjikiza kukula graphite susceptor.
Kuphatikizika kwa mpweya wa gasi ndi kuwongolera kumunda kwamafuta mu SiC epitaxial kukula ng'anjo.
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